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v23990-p849-a58/a59/c58/c59-pm preliminary datasheet flowpim0 3rd gen 1200v/8a 2 clips housing in 12 and 17mm height trench fieldstop technology igbt4 enhenced rectifier optional w/o brc industrial drives embedded generation v23990-p849-a58-pm 12mm height v23990-p849-a59-pm 17mm height v23990p849c58pm 12mm height; w/o brc v23990p849c59pm 17mm height; w/o brc tj=25c, unless otherwise specified parameter symbol value unit input rectifier doide repetitive peak reverse voltage v rrm 1600 v t =80c 36 schematics condition features fl ow0 housing target applications types maximum ratings t h =80c 36 t c =80c t h =80c 4 3 t c =80c m aximum junction temperature t jmax 150 c transistor inverter v ce 1200 v t h =80c 1 3 t c =80c r epetitive peak collector current i cpuls t j 1 50c 24 a t h =80c 4 4 t c =80c g ate-emitter peak voltage v ge 20 v t sc t j 1 50c 10 s v cc v ge =15v 8 00 v maximum junction temperature t jmax 175 c a t j =t j max w f orward current per diode surge forward current 370 p tot power dissipation per diode a a i fav a 2 s i fsm dc current t p =10ms i 2t-value t j =t j max 6 80 tj=25c p tot i 2 t t j =t j max w i c dc collector current p ower dissipation per igbt collector-emitter voltage short circuit ratings copyright vincotech 1 revision: 2
v23990-p849-a58/a59/c58/c59-pm preliminary datasheet tj=25c, unless otherwise specified pa rameter symbol value unit condition maximum ratings diode inverter t h =80c 16 t c =80c r epetitive peak forward current i frm tp limited by t j max 2 0 a t h =80c 3 6 t c =80c maximum junction temperature t jmax 175 c transistor brc collector-emitter voltage v ce 1200 v t h =80c 8 t c =80c r epetitive peak collector current i cpuls tp limited by t j max 1 2 a t h =80c 3 2 t c =80c g ate-emitter peak voltage v ge 20 v t sc t j 1 50c 10 s v cc v ge =15v 8 00 v maximum junction temperature t jmax 175 c a t j =t j max t j =t j max i f 1200 p ower dissipation per diode p tot w v rrm i c p tot t j =t j max v s hort circuit ratings dc collector current peak repetitive reverse voltage dc forward current power dissipation per igbt t j =t j max w a diode brc v rrm 1200 v t h =80c 7 t c =80c r epetitive peak forward current i frm tp limited by t j max 6 a t h =80c 1 8 t c =80c maximum junction temperature t jmax 150 c thermal properties storage temperature t stg -40+125 c operation temperature t jop -40+125 c insulation properties insulation voltage v is t=2s d c voltage 4000 v creepage distance min 12,7 mm min 12,7 mm clearance peak repetitive reverse voltage dc forward current i f t j =t j max p ower dissipation per diode p tot t j =t j max w a copyright vincotech 2 revision: 2
v23990-p849-a58/a59/c58/c59-pm preliminary datasheet p arameter symbol unit v ge (v) or v gs (v) v r (v) or v ce (v) or v ds (v) i c (a) or i f (a) o r i d (a) t (c) min typ max tj=25c 1 1,15 1,6 tj=125c 1,11 tj=25c 0,91 tj=125c 0,77 tj=25c 0,008 tj=125c 0,011 tj=25c 0,1 tj=150c thermal resistance chip to heatsink per chip r thjh thermal grease t hickness 50um = 1 w/mk 1, 66 k/w tj=25c 5 5,8 6,5 tj=125c tj=25c 1,6 1,87 2,35 tj=125c 2,20 tj=25c 0,05 tj=125c tj=25c 200 tj=125c tj=25c tj=125c 71 tj=25c tj=125c 23 tj=25c tj=125c 236 tj=25c tj=125c 108 tj=25c tj=125c 0,75 tj=25c tj=125c 0,62 490 none integrated gate resistor r gint 8 i ges 1600 3 0 0,0003 8 e on reverse current ma i r 30 v v v alue co nditions 0 characteristic values forward voltage t hreshold voltage (for power loss calc. only) slope resistance (for power loss calc. only) v f v to r t input rectifier diode 6 00 t f rgoff=32ohm r gon=32ohm fall time turn-on energy loss per pulse turn-off energy loss per pulse input capacitance t r t d(on) t d(off) e off v ge(th) v ce(sat) c ies ns n s ns i ces turn-off delay time t urn-on delay time rise time gate-emitter leakage current collector-emitter saturation voltage gate emitter threshold voltage transistor inverter collector-emitter cut-off current incl. diode 12 00 v vce=vge 0 mws na pf ns mws ma v 15 20 thermal resistance chip to heatsink per chip r thjh thermal grease t hickness 50um = 1 w/mk 2, 16 k/w tj=25c 1,35 1,70 2,2 tj=125c 1,66 tj=25c 2,7 tj=125c tj=25c tj=125c 10 tj=25c tj=125c 383 tj=25c tj=125c 1,57 di(rec)max tj=25c /dt tj=125c 69 tj=25c tj=125c 0,63 thermal resistance chip to heatsink per chip r thjh thermal grease t hickness 50um = 1 w/mk 2, 68 k/w 50 nc 15 gate charge tj=25c tj=25c reverse leakage current diode forward voltage reverse recovered charge diode inverter 8 10 mw s uc 600 ns 10 v a ma i rm i rrm q gate peak reverse recovery current o utput capacitance reverse transfer capacitance v f c oss q rr t rr a/ms e rec c rss reverse recovery time p eak rate of fall of recovery current reverse recovered energy pf 30 pf 53 f=1mhz vcc=600v 0 1200 15 25 rgon=32ohm copyright vincotech 3 revision: 2
v23990-p849-a58/a59/c58/c59-pm preliminary datasheet p arameter symbol unit v ge (v) or v gs (v) v r (v) or v ce (v) or v ds (v) i c (a) or i f (a) o r i d (a) t (c) min typ max value co nditions characteristic values tj=25c 5 5,8 6,5 tj=125c tj=25c 1,96 tj=125c 2,17 tj=25c 0,05 tj=125c tj=25c 200 tj=125c none tj=25c tj=125c 90 tj=25c tj=125c 24 tj=25c tj=125c 226 tj=25c tj=125c 99 tj=25c tj=125c 0,34 tj=25c tj=125c 0,30 thermal resistance chip to heatsink per chip r thjh thermal grease t hickness 50um = 1 w/mk 2, 93 k/w tj=25c 1 1,91 2,35 tj=125c 1,84 tj=25c tj=25c 25 25 15 250 20 0 0 1200 0,00015 15 4 vce=vge 25 600 4 transistor brc d i ode brc v v ge(th) gate emitter threshold voltage i nput capacitance v ce(sat) collector-emitter cut-off g ate-emitter leakage current i ces i ges collector-emitter saturation voltage t urn-off delay time fall time turn-on energy loss per pulse turn-on delay time integrated gate resistor turn-off energy loss per pulse reverse transfer capacitance gate charge c oss c rss q gate t r t d(off) t f output capacitance r ise time ns ns v v ma na pf pf p f ns ns mws mws nc diode forward voltage 15 4 960 4 v f rgoff=64ohm 15 f=1mhz 0 rgon=64ohm c ies e on e off r gint t d(on) tj=125c 1,84 tj=25c 250 tj=125c tj=25c tj=125c 5 tj=25c tj=125c 446 tj=25c tj=125c 0,76 di(rec)max tj=25c /dt tj=125c 40 tj=25c tj=125c 0,32 thermal resistance chip to heatsink per chip r thjh thermal grease t hickness 50um = 1 w/mk 3, 98 k/w r 25 tol. 13% t j=25c 19,1 22 24,9 k r 100 tol. 5% t j=100c 1411 1486 1560 tj=25c 210 tj =25c 4000 tol. 3% 4 15 600 4 i rrm b-value b (25/100) k p ower dissipation given epcos-typ p mw rated resistance thermistor 15 r g on=64ohm mws uc v ma ns a/ms a diode forward voltage reverse leakage current 4 600 reverse recovered charge reverse recovery energy v f i r t rr q rr e rec reverse recovery time p eak rate of fall of recovery current peak reverse recovery current copyright vincotech 4 revision: 2
v23990-p849-a58/a59/c58/c59-pm preliminary datasheet figure 1 output inverter igbt figure 2 output inverter igbt typical output characteristics i c = f(v ce ) i c = f(v ce ) a t at t p = 2 50 s t p = 2 50 s t j = 2 5 c t j = 1 25 c vge from 7 v to 17 v in steps of 1 v vge from 7 v to 17 v in steps of 1 v figure 3 ou tput inverter igbt figure 4 output inverter fred typical transfer characteristics ty pical diode forward current as ic = f(v ge ) a function of forward voltage i f = f(v f ) output inverter typical output characteristics 0 8 1 6 24 32 0 1 2 3 4 5 ic (a) v ce (v) 10 32 0 8 1 6 24 32 0 1 2 3 4 5 ic (a) v ce (v) at at t p = 2 50 s t p = 2 50 s v ce = 1 0 v 0 2 4 6 8 10 0 3 6 9 1 2 i c (a) v ge (v) 125 oc 25 oc 0 8 1 6 24 32 0 1 2 3 4 i f (a) v f (v) 25 oc 125 oc copyright vincotech 5 revision: 2
v23990-p849-a58/a59/c58/c59-pm preliminary datasheet figure 5 output inverter igbt figure 6 output inverter igbt typical switching energy losses ty pical switching energy losses as a function of collector current as a function of gate resistor e = f(i c ) e = f(r g ) w ith an inductive load at with an inductive load at t j = 1 25 c t j = 1 25 c v ce = 6 00 v v ce = 6 00 v v ge = 15 v v ge = 15 v r gon = 3 2 i c = 8 a r goff = 3 2 figure 7 ou tput inverter igbt figure 8 output inverter igbt typical switching times as a ty pical switching times as a function of collector current function of gate resistor output inverter e o ff e o n erec 0 0 ,25 0,5 0,75 1 1,25 1,5 0 4 8 12 16 e (mws) i c (a) e o ff e o n erec 0 0 ,25 0,5 0,75 1 1,25 1,5 0 30 60 90 120 150 e (mws) r g ( w ) t = f(i c ) t = f(r g ) w ith an inductive load at with an inductive load at t j = 1 25 c t j = 1 25 c v ce = 6 00 v v ce = 6 00 v v ge = 15 v v ge = 15 v r gon = 3 2 i c = 8 a r goff = 3 2 t d off t f t d on t r 0,001 0 ,01 0,1 1 0 4 8 12 16 t ( m s) ic (a) t d off t f t d on t r 0,001 0 ,01 0,1 1 0 30 60 90 120 150 t ( m s) r g ( w ww w ) copyright vincotech 6 revision: 2
v23990-p849-a58/a59/c58/c59-pm preliminary datasheet figure 9 output inverter fred diode figure 10 output inverter fred diode typical reverse recovery time as a ty pical reverse recovery current as a function of igbt turn on gate resistor function of igbt turn on gate resistor t rr = f(r gon ) i rrm = f(r gon ) a t at t j = 1 25 c t j = 1 25 c v r = 6 00 v v r = 6 00 v i f = 8 a i f = 8 a v ge = 15 v v ge = 15 v figure 11 ou tput inverter fred diode figure 12 output inverter fred diode typical reverse recovery charge as a ty pical rate of fall of forward function of igbt turn on gate resistor and reverse recovery current as a output inverter 0 0 ,1 0,2 0,3 0,4 0,5 0,6 0 30 60 90 120 150 t rr ( m s) r gon ( w ww w ) 0 5 1 0 15 20 25 30 0 30 60 90 120 150 irr m (a) r gon ( w ww w ) q rr = f(r gon ) f unction of igbt turn on gate resistor di0/dt,direc/dt = f(r gon ) a t at t j = 1 25 c t j = 1 25 c v r = 6 00 v v r = 6 00 v i f = 8 a i f = 8 a v ge = 15 v v ge = 15 v 0 0 ,4 0,8 1,2 1,6 2 0 30 60 90 120 150 q rr ( m c) r gon ( w ) di0/dt direc/dt 0 5 00 1000 1500 2000 2500 3000 0 30 60 90 120 150 di rec / dt (a/ m s) r gon ( w ) copyright vincotech 7 revision: 2
v23990-p849-a58/a59/c58/c59-pm preliminary datasheet figure 13 figure 14 igbt transient thermal impedance fr ed transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(tp) z thjh = f(tp) w ith with d = tp / t d = tp / t r thjh = 2 ,16 k/w r thjh = 2 ,68 k/w igbt thermal model values fred thermal model values r (c/w) tau (s) r (c/w) tau (s) 0,05 4,1e+00 0,05 7,9e+00 0,25 5,5e-01 0,27 7,3e-01 0,99 1,0e-01 1,07 1,3e-01 output inverter z thjh (k/w) t p (s) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 d = 0,5 0 ,2 0,1 0,05 0,02 0,01 0,005 0.000 z thjh (k/w) t p (s) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 d = 0,5 0 ,2 0,1 0,05 0,02 0,01 0,005 0.000 0,45 1,9e-02 0,69 2,5e-02 0,24 3,3e-03 0,36 3,6e-03 0,18 4,0e-04 0,25 4,3e-04 copyright vincotech 8 revision: 2
v23990-p849-a58/a59/c58/c59-pm preliminary datasheet figure 15 output inverter igbt figure 16 output inverter igbt power dissipation as a col lector current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i c = f(t h ) a t at t j = 1 75 c t j = 1 75 c v ge = 15 v fi gure 17 ou tput inverter fred figure 18 output inverter fred power dissipation as a for ward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i f = f(t h ) output inverter 0 2 0 40 60 80 100 0 50 100 150 200 p tot (w) th ( o c) 0 4 8 1 2 16 20 0 50 100 150 200 i c (a) th ( o c) 75 25 at at t j = 1 75 c t j = 1 75 c 0 1 5 30 45 60 0 50 100 150 200 p tot (w) th ( o c) 0 5 1 0 15 20 0 50 100 150 200 i f (a) th ( o c) copyright vincotech 9 revision: 2
v23990-p849-a58/a59/c58/c59-pm preliminary datasheet figure 1 brake igbt figure 2 brake igbt typical output characteristics ty pical output characteristics i c = f(v ce ) i c = f(v ce ) a t at t p = 2 50 s t p = 2 50 s t j = 2 5 c t j = 1 25 c vge from 7 v to 17 v in steps of 1 v vge from 7 v to 17 v in steps of 1 v figure 3 br ake igbt figure 4 brake fred typical transfer characteristics ty pical diode forward current as i c = f(v ge ) a function of forward voltage i f = f(v f ) brake 0 4 8 1 2 16 0 1 2 3 4 5 i c (a) v ce (v) 5 12 0 4 8 1 2 16 0 1 2 3 4 5 i c (a) v ce (v) at at t p = 2 50 s t p = 2 50 s v ce = 1 0 v 0 1 2 3 4 5 0 3 6 9 1 2 i c (a) v ge (v) 125 o c 25 o c 0 3 6 9 0 1 2 3 4 i f (a) v f (v) 125 o c 25 o c copyright vincotech 10 revision: 2
v23990-p849-a58/a59/c58/c59-pm preliminary datasheet figure 5 brake igbt figure 6 brake igbt typical switching energy losses ty pical switching energy losses as a function of collector current as a function of gate resistor e = f(i c ) e = f(r g ) w ith an inductive load at with an inductive load at t j = 1 25 c t j = 1 25 c v ce = 6 00 v v ce = 6 00 v v ge = 15 v v ge = 15 v r gon = 6 4 i c = 4 a r goff = 6 4 figure 7 br ake igbt figure 8 brake igbt typical switching times as a ty pical switching times as a function of collector current function of gate resistor brake e o ff e o n e r ec 0 0 ,15 0,3 0,45 0,6 0,75 0 2 4 6 8 e (mws) i c (a) e o ff e o n e r ec 0 0 ,15 0,3 0,45 0,6 0,75 0 60 120 180 240 300 e (mws) r g ( w ww w ) t = f(i c ) t = f(r g ) w ith an inductive load at with an inductive load at t j = 1 25 c t j = 1 25 c v ce = 6 00 v v ce = 6 00 v v ge = 15 v v ge = 15 v r gon = 6 4 i c = 4 a r goff = 6 4 t d off t f t d on t r 0,001 0 ,01 0,1 1 0 2 4 6 8 t ( m s) ic (a) t d off t f t d on t r 0,001 0 ,01 0,1 1 0 60 120 180 240 300 t ( m s) r g ( w ww w ) copyright vincotech 11 revision: 2
v23990-p849-a58/a59/c58/c59-pm preliminary datasheet figure 9 figure 10 igbt transient thermal impedance fr ed transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(t p ) z thjh = f(t p ) w ith with d = tp / t d = tp / t r thjh = 2 ,93 k/w r thjh = 3 ,98 k/w brake z thjh (k/w) t p (s) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 d = 0,5 0 ,2 0,1 0,05 0,02 0,01 0,005 0.000 z thjh (k/w) t p (s) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 d = 0,5 0 ,2 0,1 0,05 0,02 0,01 0,005 0.000 copyright vincotech 12 revision: 2
v23990-p849-a58/a59/c58/c59-pm preliminary datasheet figure 11 brake igbt figure 12 brake igbt power dissipation as a col lector current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i c = f(t h ) a t at t j = 1 75 oc t j = 1 75 oc v ge = 1 5 v figure 13 br ake fred figure 14 brake fred power dissipation as a for ward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i f = f(t h ) brake 0 1 0 20 30 40 50 60 0 50 100 150 200 p tot (w) th ( o c) 0 3 6 9 1 2 0 50 100 150 200 i c (a) th ( o c) at at t j = 1 50 oc t j = 1 50 oc 0 1 0 20 30 40 50 0 50 100 150 200 p tot (w) th ( o c) 0 2 4 6 8 1 0 12 0 50 100 150 200 i f (a) th ( o c) copyright vincotech 13 revision: 2
v23990-p849-a58/a59/c58/c59-pm preliminary datasheet figure 1 rectifier diode figure 2 rectifier diode typical diode forward current as di ode transient thermal impedance a function of forward voltage as a function of pulse width i f = f(v f ) z thjh = f(t p ) a t with t p = 2 50 s d = tp / t r thjh = 1 ,66 k/w figure 3 re ctifier diode figure 4 rectifier diode power dissipation as a for ward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i f = f(t h ) input rectifier bridge 0 2 0 40 60 80 100 0 0,5 1 1,5 2 i f (a) v f (v) 25 c 125 c z thjc (k/w) t p (s) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -5 d = 0,5 0 ,2 0,1 0,05 0,02 0,01 0,005 0.000 at at t j = 1 50 oc t j = 1 50 oc 0 2 0 40 60 80 100 0 50 100 150 200 p tot (w) th ( o c) 0 1 0 20 30 40 50 60 0 50 100 150 200 i f (a) th ( o c) copyright vincotech 14 revision: 2
v23990-p849-a58/a59/c58/c59-pm preliminary datasheet figure 1 thermistor typical ntc characteristic as a function of temperature r t = f (t) thermistor 0 5 000 10000 15000 20000 25000 25 50 75 100 125 r/ t (c) ntc-typical temperature characteristic copyright vincotech 15 revision: 2
v23990-p849-a58/a59/c58/c59-pm preliminary datasheet t j 125,3 c r gon 32 r goff 36 fi gure 1 ou tput inverter igbt figure 2 output inverter igbt turn-off switching waveforms & definition of tdoff, t eoff turn-on switching waveforms & definition of tdon, teon (t eoff = integrating time for e off ) (t eon = integrating time for e on ) v ge (0%) = - 15 v v ge (0%) = - 15 v v ge (100%) = 1 5 v v ge (100%) = 1 5 v v c (100%) = 6 00 v v c (100%) = 6 00 v i c (100%) = 8 a i c (100%) = 8 a t doff = 0 ,24 s t don = 0 ,07 s t eoff = 0 ,50 s t eon = 0 ,275 s figure 3 ou tput inverter igbt figure 4 output inverter igbt switching definitions output inverter general conditions = = = i c 1% u ce 90% u g e 90% -40 -20 0 20 40 60 80 100 120 140 -0,2 0 0,2 0,4 0,6 0,8 % time (us) t doff t eo ff uce ic u g e ic 1 0% uge 1 0% t d on u ce 3% -4 0 0 40 80 120 160 200 240 2,8 2,9 3 3,1 3,2 3,3 3,4 % time(us) ic uce t e on uge turn-off switching waveforms & definition of t f turn-on switching waveforms & definition of t r v c (100%) = 6 00 v v c (100%) = 6 00 v i c (100%) = 8 a i c (100%) = 8 a t f = 0 ,108 s t r = 0 ,023 s fitted i c1 0% i c 90% i c 60% i c 40% -20 0 20 40 60 80 100 120 140 0,15 0,2 0,25 0,3 0,35 0,4 0,45 0,5 % time (us) uce ic t f i c1 0% ic90% - 20 20 60 100 140 180 220 2,8 2,9 3 3,1 3,2 3,3 % time(us) tr uce ic copyright vincotech 16 revision: 2
v23990-p849-a58/a59/c58/c59-pm preliminary datasheet figure 5 output inverter igbt figure 6 output inverter igbt turn-off switching waveforms & definition of t eoff turn-on switching waveforms & definition of t eon p off (100%) = 4 ,93 kw p on (100%) = 4 ,932 kw e off (100%) = 0 ,62 mj e on (100%) = 0 ,75 mj t eoff = 0 ,50 s t eon = 0 ,275 s figure 7 ou tput inverter igbt figure 8 output inverter fred gate voltage vs gate charge tur n-off switching waveforms & definition of t rr switching definitions output inverter ic 1% uge90% - 20 0 20 40 60 80 100 120 -0,2 0 0,2 0,4 0,6 0,8 % time (us) poff eoff teoff u c e3% u g e10% -20 20 6 0 100 140 180 220 2,8 2,9 3 3,1 3,2 3,3 3,4 % ti me(us) p on e on t eon 20 120 v geoff = - 15 v v d (100%) = 6 00 v v geon = 1 5 v i d (100%) = 8 a v c (100%) = 6 00 v i rrm (100%) = - 10 a i c (100%) = 8 a t rr = 0 ,383 s q g = 6 1,714 nc -15 - 10 -5 0 5 10 15 -10 0 10 20 30 40 50 60 70 uge (v) qg (nc) i r rm 10% i r rm 90% i r rm 100% trr - 160 -120 -80 -40 0 40 80 2,8 3 3,2 3,4 3,6 3,8 % time(us) id ud f itted copyright vincotech 17 revision: 2
v23990-p849-a58/a59/c58/c59-pm preliminary datasheet figure 9 output inverter fred figure 10 output inverter fred turn-on switching waveforms & definition of t qrr turn-on switching waveforms & definition of t erec (t qrr = integrating time for q rr ) (t erec = integrating time for e rec ) i d (100%) = 8 a p rec (100%) = 4 ,932 kw q rr (100%) = 1 ,569 c e rec (100%) = 0 ,634 mj t qint = 0 ,80 s t erec = 0 ,80 s switching definitions output inverter 125 o c 25 o c 10 1 10 0 10 - 1 10 - 2 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 10 - 5 10 1 10 0 10 - 1 10 - 2 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 10 - 5 25 c 125 c 125 o c 25 o c 125 o c 25 o c 10 1 10 0 10 - 1 10 - 2 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 10 - 5 10 1 10 0 10 - 1 10 - 2 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 10 - 5 25 c 125 c 10 1 10 0 10 - 1 10 - 2 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 10 - 5 125 o c 25 o c 10 0 10 - 1 10 - 2 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 10 - 5 10 1 10 0 10 - 1 10 - 2 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 10 - 5 10 1 10 0 10 - 1 10 - 2 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 10 - 5 25 c 125 c 10 1 10 0 10 - 1 10 - 2 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 10 - 5 10 1 10 2 10 0 10 - 1 10 - 2 10 2 10 - 1 t vj =130 o c 10 0 10 1 10 - 3 t =25 o c v i i 100w 150w 50w p (t ) 10 0 tqint - 150 -100 -50 0 50 100 150 2,8 3 3,2 3,4 3,6 3,8 4 4,2 % t ime(us) id q r r -20 0 2 0 40 60 80 100 120 2,8 3 3,2 3,4 3,6 3,8 4 4,2 % time(us) p r ec erec te r ec copyright vincotech 18 revision: 2
v23990-p849-a58/a59/c58/c59-pm preliminary datasheet pinout package outline and pinout outline pinout copyright vincotech 19 revision: 2
v23990-p849-a58/a59/c58/c59-pm preliminary datasheet product status definitions formative or in design first production full production disclaimer life support policy as used herein: this datasheet contains preliminary data, and supplementary data may be published at a later date. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. final this datasheet contains final specifications. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. target product status datasheet status definition this datasheet contains the design specifications for product development. specifications may change in any manner without notice. the data contained is exclusively intended for technically trained staff. preliminary copyright vincotech 20 revision: 2

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